? 2011 ixys corporation, all rights reserved ds100390(10/11) ixft18n100q3 IXFH18N100Q3 n-channel enhancement mode avalanche rated fast intrinsic rectifier symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 18 a i dm t c = 25 c, pulse width limited by t jm 60 a i a t c = 25 c18 a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 150c 50 v/ns p d t c = 25 c 830 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-268 4.0 g to-247 6.0 g v dss = 1000v i d25 = 18a r ds(on) 660m advance technical information symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 4ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 1.25 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 660 m hiperfet tm power mosfets q3-class g = gate d = drain s = source tab = drain to-247 (ixfh) g s d (tab) d to-268 (ixft) s g d (tab) features z low intrinsic gate resistance z international standard packages z low package inductance z fast intrinsic rectifier z low r ds(on) and q g advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls
ixys reserves the right to change limits, test conditions, and dimensions. ixft18n100q3 IXFH18N100Q3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 9 16 s c iss 4890 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 400 pf c rss 34 pf r gi gate input resistance 0.20 t d(on) 37 ns t r 32 ns t d(off) 40 ns t f 13 ns q g(on) 90 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 33 nc q gd 37 nc r thjc 0.15 c/w r thcs to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 18 a i sm repetitive, pulse width limited by t jm 72 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 300 ns i rm 11.0 a q rm 1.5 c i f = 9a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-247 outline terminals: 1 - gate 2 - drain 3 - source to-268 outline terminals: 1 - gate 2,4 - drain 3 - source e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2011 ixys corporation, all rights reserved ixft18n100q3 IXFH18N100Q3 fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 18 01234567891011 v ds - volts i d - amperes v gs = 10v 8 v 7 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7 v 8 v 6 v 9 v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18 20 22 24 26 v ds - volts i d - amperes 6 v 5v v gs = 10v 7 v fig. 4. r ds(on) normalized to i d = 9a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 18a i d = 9a fig. 5. r ds(on) normalized to i d = 9a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 4 8 12 16 20 24 28 32 36 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixft18n100q3 IXFH18N100Q3 fig. 7. input admittance 0 5 10 15 20 25 30 35 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 0.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100110120130 q g - nanocoulombs v gs - volts v ds = 500v i d = 9a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2011 ixys corporation, all rights reserved ixys ref: f_18n100q3(q7) 9-28-11 ixft18n100q3 IXFH18N100Q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13 maximum transient thermal impedance sdasd 0.4
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